000004781 001__ 4781
000004781 005__ 20141119144553.0
000004781 04107 $$aeng
000004781 046__ $$k2002-06-02
000004781 100__ $$aWu, Chien H.
000004781 24500 $$aELECTROMIGRATION AND THE BACK FLOW POTENTIAL IN THIN FILMS AND LINES

000004781 24630 $$n15.$$pProceedings of the 15th ASCE Engineering Mechanics Division Conference
000004781 260__ $$bColumbia University in the City of New York
000004781 506__ $$arestricted
000004781 520__ $$2eng$$aElectromigration (EM) in a metal line is the phenomenon of flow of the metal atoms along the line. The flow is driven by the current of electrons and is also affected by the variation of chemical potential along the line. The replacement of atoms leads to a change in eigenstrain, which, in turn, alters the chemical potential. Since the chemical potential is very often dominated by a stress term, this back flow is very often attributed to the presence of a stress gradient. In microelectronic applications metal lines are usually subjected to the actions of large thermally induced eigenstrain even before the current is turned on. This large eigenstrain, together with the em-induced eigenstrain, may lead to a nonlinear back flow, which is the subject of investigation of this paper.

000004781 540__ $$aText je chráněný podle autorského zákona č. 121/2000 Sb.
000004781 653__ $$aElectromigration, chemical potential, and eigentransformation.

000004781 7112_ $$a15th ASCE Engineering Mechanics Division Conference$$cNew York (US)$$d2002-06-02 / 2002-06-05$$gEM2002
000004781 720__ $$aWu, Chien H.
000004781 8560_ $$ffischerc@itam.cas.cz
000004781 8564_ $$s158679$$uhttp://invenio.itam.cas.cz/record/4781/files/328.pdf$$yOriginal version of the author's contribution as presented on CD, .
000004781 962__ $$r4594
000004781 980__ $$aPAPER