000015349 001__ 15349 000015349 005__ 20161115100219.0 000015349 04107 $$aeng 000015349 046__ $$k2016-08-21 000015349 100__ $$aGerberich, William 000015349 24500 $$aEnhanced fracture toughness in silicon at small scale 000015349 24630 $$n24.$$p24th International Congress of Theoretical and Applied Mechanics - Book of Papers 000015349 260__ $$bInternational Union of Theoretical and Applied Mechanics, 2016 000015349 506__ $$arestricted 000015349 520__ $$2eng$$aBased on crack initiation loads for in—situ SEM micro-scale bend tests of single crystal silicon at temperatures from 298 to 873 K, there appears to be a minimum fracture toughness at a temperature intermediate from room temperature and the DBT which occurs at 900-95 0 K for bulk silicon. This may correspond to an activation volume transition in the vicinity of 000015349 540__ $$aText je chráněný podle autorského zákona č. 121/2000 Sb. 000015349 653__ $$a 000015349 7112_ $$a24th International Congress of Theoretical and Applied Mechanics$$cMontreal (CA)$$d2016-08-21 / 2016-08-26$$gICTAM2016 000015349 720__ $$aGerberich, William 000015349 8560_ $$ffischerc@itam.cas.cz 000015349 8564_ $$s156980$$uhttps://invenio.itam.cas.cz/record/15349/files/TS.SM10-2.06.pdf$$yOriginal version of the author's contribution as presented on CD, page 2482, code TS.SM10-2.06 . 000015349 962__ $$r13812 000015349 980__ $$aPAPER