000015349 001__ 15349
000015349 005__ 20161115100219.0
000015349 04107 $$aeng
000015349 046__ $$k2016-08-21
000015349 100__ $$aGerberich, William
000015349 24500 $$aEnhanced fracture toughness in silicon at small scale

000015349 24630 $$n24.$$p24th International Congress of Theoretical and Applied Mechanics - Book of Papers
000015349 260__ $$bInternational Union of Theoretical and Applied Mechanics, 2016
000015349 506__ $$arestricted
000015349 520__ $$2eng$$aBased on crack initiation loads for in—situ SEM micro-scale bend tests of single crystal silicon at temperatures from 298 to 873 K, there appears to be a minimum fracture toughness at a temperature intermediate from room temperature and the DBT which occurs at 900-95 0 K for bulk silicon. This may correspond to an activation volume transition in the vicinity of

000015349 540__ $$aText je chráněný podle autorského zákona č. 121/2000 Sb.
000015349 653__ $$a

000015349 7112_ $$a24th International Congress of Theoretical and Applied Mechanics$$cMontreal (CA)$$d2016-08-21 / 2016-08-26$$gICTAM2016
000015349 720__ $$aGerberich, William
000015349 8560_ $$ffischerc@itam.cas.cz
000015349 8564_ $$s156980$$uhttps://invenio.itam.cas.cz/record/15349/files/TS.SM10-2.06.pdf$$yOriginal version of the author's contribution as presented on CD,  page 2482, code TS.SM10-2.06
.
000015349 962__ $$r13812
000015349 980__ $$aPAPER