Modeling surface penetration by dislocation pileup model with image effect

Abstract eng:
In the present short paper, a continuum dislocation pileup model considering image effect (IE) is developed to study the onset of dislocation penetration at surface in thin films. It is found that due to IE, more dislocations accumulate at the surface and their absorption by surface become easier. Moreover, the critical load for penetration exhibits a ³smaller is stronger´ type size effect but different from the classical Hall-Petch relation. The present results may cast some light on constructing higher-order strain gradient crystal plasticity theories with IE.

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