Stress Fields Induced by Dislocation Loops in Isotropic Cunb Film-substrate System
Abstract eng: Based on linear superposition rules and fast discrete Fourier transformation, a semi-analytical solution is developed for calculating the elastic fields induced by dislocation loops in an isotropic thin CuNb film-substrate system. The elastic field problem of thin film-substrate system is decomposed into two sub-problems: bulk stress due to a dislocation loop in an infinite space, and correction stress induced by free surface and interface of the film-substrate system. Thus, continuous displacement and traction stress across the interface plane of the perfectly- bounded film-substrate system are generated. Elastic fields of dislocation loops within Cu film and Nb substrate of the Cu—Nb film-substrate system are analyzed, and it is found that the elastic fields of dislocation loop are influenced remarkably by film thickness.
Publisher:
International Union of Theoretical and Applied Mechanics, 2016
Conference Title:
Conference Title:
24th International Congress of Theoretical and Applied Mechanics
Conference Venue:
Montreal (CA)
Conference Dates:
2016-08-21 / 2016-08-26
Rights:
Text je chráněný podle autorského zákona č. 121/2000 Sb.
Record appears in:
Record created 2016-11-15, last modified 2016-11-15