Residual stress analysis in si-based multi-layer heterostructure by micro-raman

Abstract eng:
Si-based multilayer semiconductor heterostructures are widely used in microelectronics. Inhomogeneous residual stress is induced during their preparation In this work, a methodological study on the residual stress measurement in Si-based multi-layer heterostructure was presented The geometric parameters of the multilayer structure was measured by using scarming electron microscopy (SEM) and transmission electron microscopy (TEM), Meanwhile, the relationship between the Raman spectrum and the internal stress on the [100] and [110] crystal orientations for silicon and germanium silicon was determined to enable surface and cross-section residual stress analyses, respectively, Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained

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