Enhanced fracture toughness in silicon at small scale

Abstract eng:
Based on crack initiation loads for in—situ SEM micro-scale bend tests of single crystal silicon at temperatures from 298 to 873 K, there appears to be a minimum fracture toughness at a temperature intermediate from room temperature and the DBT which occurs at 900-95 0 K for bulk silicon. This may correspond to an activation volume transition in the vicinity of

• Export as: BibTeX | MARC | MARCXML | DC | EndNote | NLM | RefWorks
• Add to your basket